ty semiconductor reliability handbook (?handling SSM6N7002FU high speed switching applications analog switch applications ? small package ? low on resistance : r on = 3.3 (max) (@v gs = 4.5 v) : r on = 3.2 (max) (@v gs = 5 v) : r on = 3.0 (max) (@v gs = 10 v) absolute maximum ratings (ta = 25c) (q1, q2 common) characteristics symbol rating unit drain-source voltage v ds 60 v gate-source voltage v gss 20 v dc i d 200 drain current pulse i dp 800 ma drain power dissipation (ta = 25c) p d (note 1) 300 mw channel temperature t ch 150 c storage temperature range t stg ? 55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: total rating, mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 0.32mm 2 6) marking equivalent circuit (top view) handling precaution when handling individual devices (which are not yet mount ing on a circuit board), be sure that the environment is protected against electrostatic electricity. operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. unit: mm nc 6 5 4 1 2 3 q1 q2 654 123 0.4 mm 0.8 mm 1.source1 2.gate1 3.drain2 4.source2 5.gate2 6.drain1 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
2007-11-01 2 electrical characteristics (ta = 25c) (q1, q2 common) characteristics symbol test condition min typ max unit gate leakage current i gss v gs = 20 v, v ds = 0 ? ? 10 a drain-source breakdown voltage v (br) dss i d = 0.1 ma, v gs = 0 60 ? ? v drain cut-off current i dss v ds = 60 v, v gs = 0 ? ? 1 a gate threshold voltage v th v ds = 10 v, i d = 0.25 ma 1.0 ? 2.5 v forward transfer admittance ? y fs ? v ds = 10 v, i d = 200 ma 170 ? ? ms i d = 500 ma, v gs = 10 v ? 2.0 3.0 i d = 100 ma, v gs = 5 v ? 2.1 3.2 drain-source on resistance r ds (on) i d = 100 ma, v gs = 4.5 v ? 2.2 3.3 input capacitance c iss ? 17 ? pf reverse transfer capacitance c rss ? 1.4 ? pf output capacitance c oss v ds = 25 v, v gs = 0, f = 1 mhz ? 5.8 ? pf turn-on delay time td (on) ? 2.4 4.0 switching time turn-off delay time td (off) v dd = 30v, i d = 200 ma, v gs = 0 ~ 10v ? 26 40 ns switching time test circuit precaution v th can be expressed as voltage between gate and source when low operating current value is i d =250 a for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than v th . (relationship can be established as follows: v gs (off) < v th < v gs (on) ) please take this into consideration for using the device. v dd = 30 v duty < = 1% v in : t r , t f < 2 ns (z out = 50 ) common source ta = 25c in v dd out 50 r l (c) v out (b) v in (a) test circuit 10v 0 10 s td (on) 90% 10% 0 v 10 v 10% 90% td (off) t r t f v dd v ds ( on ) 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com SSM6N7002FU product specification
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